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       CDBV120-G Thru. CDBV140-G Forward current: 1.0A Reverse voltage: 20 to 40V RoHS Device QW-BB015 Page 1 REV:B Features -For use in low voltage, high frequency inverters. -Free wheeling, and polarity protection applications. Mechanical Data -Case: SOD-323, molded plastic. -T erminals: solderable per MIL-STD-750, method 2026. -Polarity: indicated by cathode end. Marking CDBV120-G: SJ CDBV130-G: SK CDBV140-G: SL Dimensions in inches and (millimeter) SOD-323 Parameter Unit Maximum Ratings (At Ta=25°C, unless otherwise noted) Non-repetitive peak reverse voltage Peak repetitive peak reverse voltage Working peak reverse voltage DC blocking voltage RMS reverse voltage Average rectified output current Peak forward surge current @8.3ms Repetitive peak forward current Power dissipation Thermal resistance, junction to ambient Storage temperature Symbol CDBV120-G 0.071 (1.80) 0.063 (1.60) 0.055 (1.40) 0.047 (1.20) 0.106 (2.70) 0.098 (2.50) 0.035 (0.90) 0.031 (0.80) 0.014 (0.35) 0.010 (0.25) 0.019 (0.475)REF 0.006 (0.150) 0.004 (0.10)max CDBV130-G CDBV140-G VRM VRRM VRWM VR VR(RMS) IO IFSM IFRM PD RθJA TSTG 20 20 14 30 30 21 1 9 1.5 250 500 -65 ~ +150 40 40 28 V V V A A A mW °C/W °C Parameter Unit Electrical Characteristics (At Ta=25°C, unless otherwise noted) Reverse breakdown voltage Reverse voltage leakage current CDBV140-G Forward voltage Diode capacitance Symbol Min. Max. 20 30 40 V mA V pF Conditions CDBV120-G CDBV130-G CDBV140-G CDBV120-G CDBV130-G CDBV140-G CDBV120-G CDBV130-G CDBV120-G CDBV130-G CDBV140-G VR=4V, f=1MHz VBR IR VF CD 1 0.45 0.55 0.60 0.75 0.875 0.90 120 IR=1mA VR=20V VR=30V VR=40V IF=1A IF=3A Comchip Technology CO., LTD. SMD Schottky Barrier Diodes 0.003 (0.080) |